document number: 81020 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.8, 08-oct-09 1 infrared emitting diode, 875 nm, gaalas tsha5500 vishay semiconductors description the tsha5500 is an infrared, 875 nm emitting diode in gaalas on gaalas technology, molded in a clear, untinted plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? peak wavelength: p = 875 nm ? high reliability ? angle of half intensity: ? = 24 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? infrared remote control and free air data transmission systems with comfort able radiation angle ? this emitter is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 390 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) tsha5500 30 24 875 600 ordering information ordering code packaging remarks package form tsha5500 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 2.5 a power dissipation p v 180 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance juncti on/ambient j-std-051, leads 7 mm, soldered on pcb r thja 230 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81020 2 rev. 1.8, 08-oct-09 tsha5500 vishay semiconductors infrared emitting diode, 875 nm, gaalas fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 200 010203040506070 8 0 90 100 21142 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 230 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21143 i f - for w ard c u rrent (ma) r thja = 230 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v i f = 1 a, t p = 100 s v f 2.8 3.5 v temperature coefficient of v f i f = 100 ma tk vf - 1.6 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 20 pf radiant intensity i f = 100 ma, t p = 20 ms i e 16 30 48 mw/sr i f = 1 a, t p = 100 s i e 128 240 mw/sr radiant power i f = 100 ma, t p = 20 ms e24mw temperature coefficient of e i f = 20 ma tk e - 0.7 %/k angle of half intensity ? 24 deg peak wavelength i f = 100 ma p 875 nm spectral bandwidth i f = 100 ma ? 80 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 600 ns i f = 1 a t r 300 ns fall time i f = 100 ma t f 600 ns i f = 1 a t f 300 ns virtual source diameter d 2.2 mm
document number: 81020 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.8, 08-oct-09 3 tsha5500 infrared emitting diode, 875 nm, gaalas vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current fig. 7 - radiant power vs. forward current fig. 8 - relative radiant intensity/power vs. ambient temperature t p - p u lse d u ration (ms) 94 8 003 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 t p /t= 0.01 i fsm = 2.5 a (single pa u se) 0.05 0.1 0.2 0.5 i- for w ard c u rrent (a) f v f - for w ard v oltage ( v ) 94 8 005 10 1 10 2 10 3 10 4 t p = 100 s t p /t= 0.001 4 3 2 1 0 i- for w ard c u rrent (ma) f 0.7 0. 8 0.9 1.0 1.1 1.2 v f rel - relati v e for w ard v oltage ( v ) 94 7990 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 i f = 10 ma i f - for w ard c u rrent (ma) 94 8 014-1 10 3 10 1 10 2 10 4 10 0 1 10 100 1000 i e - radiant intensity (m w /sr) tsha 5500 - radiant po w er (m w ) e i f - for w ard c u rrent (ma) 94 8 015 e 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0. 8 1.2 1.6 i ; e rel e rel 140 94 8 020 i f = 20 ma t am b - am b ient temperat u re (c)
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81020 4 rev. 1.8, 08-oct-09 tsha5500 vishay semiconductors infrared emitting diode, 875 nm, gaalas fig. 9 - relative radiant power vs. wavelength fig. 10 - relative radiant intensity vs. angular displacement package dimensions in millimeters 7 8 0 88 0 - w a v elenght (nm) 9 8 0 94 8 000 - relati v e radiant po w er e 0 0.25 0.5 0.75 1.0 1.25 i f = 100 ma p e e e )/ () ( ) rel = ( 0.4 0.2 0 0.2 0.4 i - relati v e radiant intensity erel 0.6 94 8 016 e 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 14435 35.2 0.55 < 0.7 1.1 0.25 0.5 + 0.15 - 0.05 ? 5 0.15 2.54 nom. 0.5 + 0.15 - 0.05 ? 5. 8 0.15 8 .7 0.3 7.7 0.15 1 min. area not plane 6.544-525 8 .0 8 -4 a c (4.4) 12.2 0.3 r 2.49 (sphere) specifications according to di n technical dra w ings iss u e: 4; 19.05.09
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